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  Datasheet File OCR Text:
 Ordering number:EN4495
FP202
PNP/NPN Epitaxial Planar Silicon Transistor
Push-Pull Circuit Applications
Features
* Composite type with 2 transistors (PNP and NPN) contained in one package facilitating high-density mounting. * The FP202 is formed with a chip being equivalent to the 2SA1338 and a chip being equivalent to the 2SC3392, placed in one package.
Package Dimensions
unit:mm 2097A
[FP202]
1:Base (PNP TR) 2,7:Collector (PNP TR) 3:Emitter Common 4,6:Collector (NPN TR) 5:Base (NPN TR) SANYO:PCP5 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Conditions
( ) : PNP
Ratings (-)60 (-)50 (-)5 (-)500 (-)800 (-)0.1 Unit V V V mA mA A W W
Mounted on ceramic board (250mm2x0.8mm) 1unit Mounted on ceramic board (250mm2x0.8mm)
0.75 1.0 150 -55 to +150
C C
Marking:202 Electrical Connection
Continued on next page.
Switching Time Test Circuit
1:Base (PNP TR) 2,7:Collector (PNP TR) 3:Emitter Common 4,7:Collector (NPN TR) 5:Base (NPN TR) (Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)53094TH(KOTO) 8-9784 No.4495-1/5
FP202
Continued from preceding page.
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=(-)40V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)10mA VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz IC=(-)100mA, IB=(-)10mA IC=(-)100mA, IB=(-)10mA (-)60 (-)50 (-)5 (70) 70 (400) 600 (50) 70 140 (200) 250 (5.6) 3.7 (-100) 70 (-)0.8 V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)100A, RBE= V(BR)EBO ton tstg tf IE=(-)10A, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit (-300) 200 (-)1.2 Conditons Ratings min typ max (-)100 (-)100 400 MHz MHz pF pF mV mV V V V V ns ns ns ns ns ns Unit nA nA
No.4495-2/5
FP202
No.4495-3/5
FP202
No.4495-4/5
FP202
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice.
PS No.4495-5/5


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